For all lithography:	1) solvent clean and bake it good and dry
	2) coat with HMDS for >15s, spin off
	3) always allow time (>1 min)  to cool after all baking steps
resist	spin	soft bake	expose	hard bake	develop	target thickness	other steps
SPR510A	30 s at 4 krpm	1.5 min at 90 C	stepper: ~ 0.95 s	1 min at 105 C	~1 min	~ 1.1 micron
					in MF701
AZ P4330 RS	30 s at 5 krpm	1 min at 95 C	Karl Suss: ~14 s	1 min at 105 C	4 to 4.5 min	~ 3.2 microns
					in AZ 400K 1:4
AZ P4110	30 s at 4 krpm	1 min at 95 C	Karl Suss: ~10 s	?	~1.5 min	~1.2 microns
					in AZ 400K 1:4
AZ 4620	ramp up to	100 s at 110 C	stepper: ~1.65 s	-	~1.5 min	~7.4 microns
	30 s at 4 krpm		Karl Suss: ~20s		in AZ 400K 1:4
AZ 5214 (negative)	30 s at 4 krpm	1 min at 95 C	Karl Suss: ~10 s	1 min at 112 C	flood expose 1 min	~1.3 microns
					then
					~1 min
					in AZ 400K 1:5.5
SPR518	30 s at 3krpm	1 min at 90 C	Stepper~ 1.1 s Focus Offset=12??	1 min at 105 C	90 s in MF701	~2.1 microns	Rinse in Di 3 min after developing
AZ4210	5K for 30sec	95 for 1min	Stepper ~0.64 sec		AZ400K 1:4 for 65 sec/150 if hardbaked	2.1 microns
SPR 950	3.5K for 30 sec	90C for 1 min	1.7sec in Stepper	2min at 100C	Rinse in DI 30 sec PRIOR to develop in MF701 2min 20sec	0.8 microns	Spin 365CEM at 3.5Kb/w 3 and 4 for 30 sec for contrast enhancement.
SPR220-7.0	3.0K for 30 sec	90 C for 100sec + 100C for 100 sec	Stepper: ~4sec     Contact Aligner ~30sec	115C for 90 sec	90-120sec in MF701	7.5 microns	Hold time ~30 mins between exposure and Hard bake
AZ 9260	3.0K for 30 sec	110 C for 80 sec: 10um: then 2nd coat	6.5 sec in stepper	None	AZ 400K 1:4 for 300 sec		AZ300T at   80C for stripping
	3.0K for 30 sec	110 C for 160 sec: total 24 um				24um