| AlN RF Resonators advanced piezolelectric actuators and mechanical filters |
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| Active research focuses on the design, fabrication, and testing of Film Bulk Acoustic Resonators (FBARs) to be used in the telecommunication market. The suspended resonators consist of a thin film of sputtered aluminum nitride sandwiched between metal electrodes. Below the bottom electrode is an air cavity. AlN beams connect the resonators to the substrate. The AlN films are initially sputtered on a <100> silicon substrate but at a later fabrication step all the silicon supporting the resonator is removed using a silicon DEEP RIE process. Results of a resonator which exhibited a keff2 of 4.6% and a quality factor of 200 were recently presented at the 2004 IEEE Ultrasonics, Ferroelectrics, Frequency Control 50th Anniversary Joint Conference.
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| Scanning electron micrograph of a beam-supported FBAR device following the fabrication procedure. | |||||||||