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Rudiyanto GunawanPatent: 1.
“Methods
for Controlling Dopant Concentration and Activation
in Semiconductor Structures” with E. G. Seebauer, R. D. Braatz and M.
Y. L. Jung, patent application 8/2004. Book Chapter: 1.
R. Gunawan, K.
Gadkar, and F. J. Doyle III. Methods to Identify Cellular Architecture and
Dynamics from Experimental Data. In J. Stelling
(Ed.), System Modeling in Cellular Biology: From Concepts to Nuts and Bolts,
MIT Press, 2005. in press Journal Articles: 1.
R. Gunawan and
F. J. Doyle III. Isochron-based Phase Sensitivity Analysis of Oscillatory
Systems, 2005. in preparation 2.
K. Gadkar, R.
Gunawan, and F. J. Doyle III. Iterative approach to model identification of
biological networks, BMC Bioinformatics,
2005. in press 3.
R. D. Braatz,
R. C. Alkire, E. G. Seebauer, E. Rusli, R. Gunawan, T. O. Drews,
X. Li, and Y. He. Perspectives on the dynamics and control of multiscale systems, J.
Process Control, 2005. in press 4.
R. Gunawan, Y.
Cao, L. Petzold, and F. J. Doyle III. Sensitivity analysis of discrete
stochastic system. Biophys. J, 88:2530-2540, 2005. 5.
M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G.
Seebauer. Pair diffusion
and kick-out: Contributions to diffusion of boron in silicon. AIChE J., 50:3248-3256, 2004. 6.
R. Gunawan, 7.
M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G.
Seebauer. Effect of
near-surface band bending on dopant profiles in
ion-implanted silicon. J. Appl. Phys.,
95:1134-1140, 2004. 8.
M. Fujiwara, J.
C. Pirkle Jr., T. Togkalidou,
D. L. Ma, R. Gunawan, and R. D. Braatz. A holistic approach to materials
process design. J. Materials Edu., 24:65-70,
2004. 9.
M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G.
Seebauer. A simplified
picture for transient enhanced diffusion of boron in silicon. J. Electrochem. Soc., 151:G1-G7, 2004. 10.
R. Gunawan, M. Y. L. Jung, R. D. Braatz, and E. G.
Seebauer. Optimal control
of rapid thermal annealing in a semiconductor process. J. Process Control, 14:423-430, 2004. 11.
K. Dev, M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E.
G. Seebauer. Mechanism for
coupling between properties of interfaces and bulk semiconductors. Phys.
Rev. B., 68:195311-195316, 2003. 12.
M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G.
Seebauer. Ramp-rate
effects on transient enhanced diffusion and dopant
activation. J. Electrochem. Soc.,
150:G838-G842, 2003. 13.
R. Gunawan, M. Y. L. Jung, R. D. Braatz, and E. G.
Seebauer. Parameter
sensitivity analysis applied to modeling transient enhanced diffusion and
activation of boron in silicon. J. Electrochem.
Soc., 150:G758-G765, 2003. 14.
R. Gunawan, M. Y. L. Jung, R. D. Braatz, and E. G.
Seebauer. Maximum a
posteriori estimation of transient enhanced diffusion kinetics. AIChE J., 49:2114-2123, 2003. 15.
R. Gunawan, D.
L. Ma, M. Fujiwara, and R. D. Braatz. Identification of kinetic parameters in
a multidimensional crystallization process. Int. J. Modern Phys. B, 16:367-374, 2002. 16. R. Gunawan, E. L. Russell, and R. D. Braatz.
Comparison of theoretical and computational characteristics of dimensionality
reduction methods for large scale uncertain systems. J. Process Control,
11:543-552, 2001. Peer-reviewed Conference Proceedings: 1.
R. Gunawan, M. Y. L. Jung, E. G. Seebauer, and R. D.
Braatz. Optimal control of transient
enhanced diffusion. In Proc. of the
IFAC Symp. on Advanced
Control of Chemical Processes, pp. 603-608, Hong Kong, 2.
R. Gunawan, M. Y. L. Jung, R. D. Braatz and E. G.
Seebauer. Systems Analysis Applied to
Modeling Dopant Activation and TED in Rapid Thermal
Annealing. In Proc. of the 10th IEEE Intl. Conf. on Advanced
Thermal Processing of Semiconductors, pp. 107-110, 2002. 3.
R. Gunawan, E.
L. Russell, and R. D. Braatz. Robustness analysis of multivariable systems
with time delays. In Proc. of European Control Conf., pp.
1882-1887, 4.
M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G.
Seebauer. New physics for modeling
transient enhanced diffusion in RTP. In Rapid
Thermal & Other Short-Time Processing Technologies, vol. 2000-9, pp.
15-20, 2000. The Electrochemical Society. |